发明名称 Electrostatic discharge protection device
摘要 An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate, a first and a second doped region formed in the substrate. The first and second doped regions are separated from each other by only the substrate region. The ESD protection device includes no gate above the first and second doped regions. Furthermore, the distance separating the first and second doped regions is defined by a length of a resist during a process of forming the ESD protection device.
申请公布号 US6914306(B1) 申请公布日期 2005.07.05
申请号 US20000648919 申请日期 2000.08.25
申请人 MICRON TECHNOLOGY, INC. 发明人 MARR KENNETH W.
分类号 H01L21/336;H01L21/8238;H01L23/62;H01L27/02;(IPC1-7):H01L23/62 主分类号 H01L21/336
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