| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve uniformity of thickness by previously improving the step of an oxide layer before CMP(Chemical Mechanical Polishing). CONSTITUTION: Metal patterns(110) with different pattern density are formed on a desired lower layer(100). The first and second insulating layer(120,130b) are sequentially formed on the resultant structure. A photoresist layer is coated on the second insulating layer. A photoresist pattern(140b) is formed by selectively removing the photoresist layer to remove the step caused by the pattern density of metal lines. Then, the second insulating layer is selectively removed to remove the step. The remaining photoresist pattern is removed. Then, the second insulating layer is polished by CMP. |
