发明名称 |
SEMICONDUCTOR STRUCTURE, AND METHODS FOR FABRICATING SAME |
摘要 |
The invention relates to a method of producing a semiconductor structure, the method comprising: - forming in a first semiconductor material substrate (30) a first dielectric area (32a-c) of a first dielectric material having a first thickness and a second dielectric area (34a-b) having a second thickness, - assembling said first substrate with a second semiconductor material substrate (40), - fracturing the portion of the substrate in which the weakened layer is produced, and- thinning one or both substrates.
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申请公布号 |
KR20050070116(A) |
申请公布日期 |
2005.07.05 |
申请号 |
KR20057007871 |
申请日期 |
2005.05.03 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
GHYSELEN BRUNO;RAYSSAC OLIVIER;AULNETTE CECILE;MAZURE CARLOS |
分类号 |
H01L21/762;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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