发明名称 Transistor circuit
摘要 Transistor capacitance Cdtr inevitably generated between the gate and the drain of a second TFT is increased. Accordingly, an operation test of a first TFT and the second TFT can be conducted by turning on the first TFT to charge the transistor capacitance Cdtr and detecting the stored charges.
申请公布号 US6914448(B2) 申请公布日期 2005.07.05
申请号 US20030388254 申请日期 2003.03.13
申请人 SANYO ELECTRIC CO., LTD. 发明人 JINNO YUSHI
分类号 H01L21/822;G09G3/00;G09G3/32;H01L21/336;H01L27/04;H01L27/12;H01L27/32;H01L29/786;(IPC1-7):G01R31/26 主分类号 H01L21/822
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