发明名称 |
Memory cell strings |
摘要 |
A method for performing a read operation from a magnetic random access memory (MRAM) cell in a memory cell string is provided. The method includes applying a constant current through the memory cell string, measuring a first voltage across the memory cell string, applying a write sense current across the MRAM cell, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.
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申请公布号 |
US6914809(B2) |
申请公布日期 |
2005.07.05 |
申请号 |
US20040765484 |
申请日期 |
2004.01.27 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
HILTON RICHARD L.;CHAMPION CORBIN L.;SMITH KENNETH K.;PERNER FREDERICK A. |
分类号 |
G11C11/15;G11C5/00;G11C7/06;G11C7/22;G11C11/00;G11C11/02;G11C11/16;G11C16/04;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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