发明名称 PHOTO MASK
摘要 Photomasks are disclosed. A disclosed example photomask comprises: a first pattern located along an axis of the photomask; at least one second pattern located a distance from and a predetermined angle to the first pattern; and slits made of Cr on at least one end of each of the first and second patterns, wherein the photomask is a Cr-less mask.
申请公布号 KR20050069244(A) 申请公布日期 2005.07.05
申请号 KR20030101206 申请日期 2003.12.31
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 KIM, HONG LAE
分类号 G03F1/08;G03C5/00;G03F1/00;G03F1/14;G03F1/34;G03F1/54;G03F9/00;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F1/08
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