发明名称 |
All-in-one polishing process for a semiconductor wafer |
摘要 |
A semiconductor wafer has a top surface and an edge bevel surface, and a first material layer and a second material layer are respectively formed on the top surface and the edge bevel surface. A surface chemical mechanical polishing (surface CMP) process is performed to polish and remove portions of the first material layer down to a first thickness, and a rim CMP process is performed to completely remove the second material layer on the edge bevel surface down to the edge bevel surface thereafter to achieve a smooth surface of the edge bevel surface. Finally, a chemical cleaning process is performed to clean the edge bevel surface and the top surface, and the semiconductor wafer is dried thereafter.
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申请公布号 |
US6913520(B1) |
申请公布日期 |
2005.07.05 |
申请号 |
US20040707838 |
申请日期 |
2004.01.16 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIAO MU-LIANG;CHENG CHI-PIAO;HUNG TE-SUNG;KUO YUNG-CHIEH |
分类号 |
B24B1/00;B24B37/04;(IPC1-7):B24B1/00 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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