摘要 |
A method for fabricating a capacitor for a semiconductor device is disclosed, which comprises the steps of: forming a storage node electrode on a semiconductor wafer, forming a dielectric layer made of a cyclic silicon nitride layer on the surface of the storage node electrode, and forming an upper electrode on the dielectric layer; lowering the thickness T<SUB>eff </SUB>of the dielectric layer and improving leakage current characteristics through use of a cyclic Si<SUB>3</SUB>N<SUB>4 </SUB>or a cyclic SiO<SUB>x</SUB>N<SUB>y </SUB>(wherein x falls between 0.1 and 0.9 and y falls between 0.1 and 2), having a large oxidation resistance and high dielectric ratio, as a dielectric.
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