发明名称 |
Dedicated redundancy circuits for different operations in a flash memory device and methods of operating the same |
摘要 |
A flash memory device can include a first redundancy circuit configured to provide read repair information for read operations to the flash memory. The flash memory device can also include a second redundancy circuit, separate from the first redundancy circuit, configured to provide write repair information for write operations to the flash memory. The flash memory device can include a dedicated-read operation redundancy circuit configured to provide read repair information and a dedicated-write operation redundancy circuit configured to provide write repair information. The flash memory device can include also include a first redundancy circuit configured to store an address of a defective memory cell in the flash memory and a second redundancy circuit, separate from the first redundancy circuit, configured to store the address of the defective memory cell.
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申请公布号 |
US6914814(B2) |
申请公布日期 |
2005.07.05 |
申请号 |
US20030630116 |
申请日期 |
2003.07.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
IM JAE-WOO;LIM YOUNG-HO |
分类号 |
G11C16/06;G11C7/00;G11C11/34;G11C29/00;G11C29/04;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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