发明名称 Wafer scribing method and wafer scribing device
摘要 The present invention relates to a scribing method for wafers ( 11 ), wherein a defined beam ( 12 ) is directed onto the wafer ( 11 ) by means of a beam generator means ( 10 ) so as to remove some wafer material from a wafer region. The invention also relates to a wafer-scribing device including a wafer mount ( 31 ) and a beam generator means ( 10 ) by means of which at least one defined beam can be directed onto the wafer ( 11 ). The inventive method is distinguished by the by the further step of generating a first radiation pulse having a predeterminable energy density and used to create a comparatively deep pit ( 18 ) in the wafer ( 11 ). The inventive wafer scribing means is distinguished by the provision that a radiation pulse can be generated by means of which a comparatively deep pit ( 18 ) can be created in the wafer ( 11 ).
申请公布号 US6914006(B2) 申请公布日期 2005.07.05
申请号 US20010016633 申请日期 2001.10.30
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 PEITER MARTIN;MARX ECKHARD;MAUTZ KARL E.
分类号 B23K26/38;H01L21/00;H01L21/301;H01L21/304;H01L23/544;(IPC1-7):H01L21/302 主分类号 B23K26/38
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