发明名称 |
Wafer scribing method and wafer scribing device |
摘要 |
The present invention relates to a scribing method for wafers ( 11 ), wherein a defined beam ( 12 ) is directed onto the wafer ( 11 ) by means of a beam generator means ( 10 ) so as to remove some wafer material from a wafer region. The invention also relates to a wafer-scribing device including a wafer mount ( 31 ) and a beam generator means ( 10 ) by means of which at least one defined beam can be directed onto the wafer ( 11 ). The inventive method is distinguished by the by the further step of generating a first radiation pulse having a predeterminable energy density and used to create a comparatively deep pit ( 18 ) in the wafer ( 11 ). The inventive wafer scribing means is distinguished by the provision that a radiation pulse can be generated by means of which a comparatively deep pit ( 18 ) can be created in the wafer ( 11 ). |
申请公布号 |
US6914006(B2) |
申请公布日期 |
2005.07.05 |
申请号 |
US20010016633 |
申请日期 |
2001.10.30 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
PEITER MARTIN;MARX ECKHARD;MAUTZ KARL E. |
分类号 |
B23K26/38;H01L21/00;H01L21/301;H01L21/304;H01L23/544;(IPC1-7):H01L21/302 |
主分类号 |
B23K26/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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