Sense amplifier circuits using a single bit line input

摘要

An integrated circuit memory device can include a memory cell circuit configured to store data and a sense amplifier circuit configured to sense and amplify the stored data provided as a first input to the sense amplifier circuit in comparison to a reference voltage provided as a second input to the sense amplifier circuit. A bit line electrically can be coupled to the memory cell circuit and indirectly electrically coupled to the first input of the sense amplifier circuit and configured to provide the stored data to the sense amplifier circuit. A reference voltage line can also be indirectly electrically coupled to the second input of the sense amplifier circuit and configured to provide the reference voltage to the sense amplifier circuit.