| 摘要 |
A metal film forming method, includes the steps of (a) (s 13 , s 15 ) supplying a plural kinds of ingredient gases to a base barrier film ( 3 ) in sequence, wherein at least one of the gases includes a metal, and (b) (s 14 , s 16 ) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film ( 5 ) of the metal is formed on the base barrier film ( 3 ).
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