| 摘要 |
A polishing method of the present invention is a polishing method for planarizing a film to be polished that is deposited on a wafer, and includes a step (a) of establishing a polishing rate distribution of the film to be polished that is deposited on the wafer and a target film thickness distribution after polishing of the film to be polished, a step (b) of measuring a film thickness distribution before polishing of the film to be polished, a step (c) of calculating a predicted film thickness distribution after polishing of the film to be polished from the film thickness distribution before polishing and the polishing rate distribution, a step (d) of calculating a pressure against a polishing pad for each of a plurality of regions of the film to be polished and a polishing time from the predicted film thickness distribution and the target film thickness distribution, and a step (e) of polishing while applying the pressure against the film to be polished during the polishing time.
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