发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device includes a substrate which has a main surface, a back surface, and a through hole. The semiconductor device also includes an insulating film formed on an inner wall of the through hole, a conductive member provided on the insulating film within the through hole, an external terminal provided above the main surface, and a wiring portion connected to the external terminal. The semiconductor device also includes an encapsulating layer which covers the main surface and the wiring portion except for a portion to which the external terminal is connected. A side surface of the encapsulating layer is formed inside a side surface of the substrate.
申请公布号 US6914327(B2) 申请公布日期 2005.07.05
申请号 US20040849385 申请日期 2004.05.20
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 SHIZUNO YOSHINORI
分类号 H01L23/52;H01L21/301;H01L21/3205;H01L21/56;H01L23/04;H01L23/12;H01L23/31;(IPC1-7):H01L23/04 主分类号 H01L23/52
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