| 摘要 |
It is an object to provide a semiconductor device having an improved heat dissipation characteristic. A power element is mounted on and jointed and to a metal block through a jointing material. An insulating substrate includes a ceramic substrate and metal layers formed on both surfaces of the ceramic substrate and having thicknesses equal to each other. The metal block and the insulating substrate are provided per insulation unit of the power element. The metal layer of the insulating substrate is joined to a surface of the metal block through a jointing material opposite to a surface thereof for forming the power element. An electrode terminal is attached to a surface of the metal block having a power element joined thereto through ultrasonic junction and the like. Electrode terminals are connected to electrodes of the power element through aluminum wires. The power element, the electrode terminals and the metal block are sealed with a resin package while the metal layer of the insulating substrate remains exposed. An external heat dissipator is attached to the exposed metal layer of the insulating substrate. |
