发明名称 |
MOSFETS INCORPORATING NICKEL GERMANOSILICIDED GATE AND METHODS OF THEIR FORMATION |
摘要 |
A MOSFET gate or a MOSFET source or drain region comprises silicon germanium or polycrystalline silicon germanium. Silicidation with nickel is performed to form a nickel germanosilicide (62, 64) that preferably comprises the monosilicide phase of nickel silicide. The inclusion of germanium in the silicide provides a wider temperature range within which the monosilicide phase may be formed, while essentially preserving the superior sheet resistance exhibited by nickel monosilicide. As a result, the nickel germanosilicide is capable of withstanding greater temperatures during subsequent processing than nickel monosilicide, yet provides approximately the same sheet resistance and other beneficial properties as nickel monosilicide.
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申请公布号 |
KR20050070011(A) |
申请公布日期 |
2005.07.05 |
申请号 |
KR20057005285 |
申请日期 |
2003.09.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PATON ERIC N.;XIANG QI;BESSER PAUL R.;LIN MING REN;NGO MINH VAN;WANG HAIHONG |
分类号 |
H01L21/28;H01L21/336;H01L29/10;H01L29/49;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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