| 摘要 |
As shown in FIG. 2 , a multi-layer structured exposure mask 1 of this embodiment is provided with a frame 20 made of glass, a silicon plate 15 provided on an under surface of the frame 20 , a heat absorption mask 16 provided on an under surface of the silicon plate 15 , a silicon plate 11 provided on an under surface of the heat absorption mask 16 and a stencil mask 14 provided on an under surface of the silicon plate 11 . The stencil mask 14 is made up of a silicon substrate and is provided with a slit-shaped patterning opening 14 a to form a resist pattern. The heat absorption mask 16 is made up of a silicon substrate coated with an SiN film and is provided with slit-shaped openings 16 a shaped in almost the same way as the patterning openings 14 a of the stencil mask 14 . The opening 16 a is shaped in such a size that will not block electron beams necessary to form a resist pattern as shown in FIG. 3 (a). That is, a size of the opening 16 a is equal to a size of the patterning opening 14 a or a size of the opening 16 a is a little larger Furthermore, the multi-layer structured exposure mask 1 of this embodiment is provided with a large opening 20 a that penetrates the frame 20 and silicon plate 15 and exposes the area of the upper surface of the heat absorption mask 16 in which the openings 16 a are formed. Furthermore, the multi-layer structured exposure mask 1 of this embodiment is provided with a hollow section 11 a that penetrates the silicon plate 11 and exposes the area of the under surface of the heat absorption mask 16 in which the openings 16 a are formed and the area of the upper surface of the stencil mask 14 in which the patterning openings 14 a are formed. In the multi-layer structured exposure mask 1 of this embodiment, the patterning openings 14 a of the stencil mask 14 and the openings 16 a of the heat absorption mask 16 are aligned in the horizontal direction as shown in FIG. 3 (a). |
