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发明名称
METHOD FOR FORMING MULTI GATE INSULATOR OF SEMICONDUCTOR DEVICE
摘要
申请公布号
KR20050068756(A)
申请公布日期
2005.07.05
申请号
KR20030100554
申请日期
2003.12.30
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, KYUNG SOO;KANG, HEE SUNG
分类号
H01L21/31;(IPC1-7):H01L21/31
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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