METHOD FOR MANUFACTURING FERROELECTRIC RANDOM ACCESS MEMORY,申请号KR20030098539-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING FERROELECTRIC RANDOM ACCESS MEMORY
摘要
申请公布号	KR20050067553(A)	申请公布日期	2005.07.05
申请号	KR20030098539	申请日期	2003.12.29
申请人	HYNIX SEMICONDUCTOR INC.	发明人	NOH, KEUM HWAN
分类号	H01L27/105;(IPC1-7):H01L27/105	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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