METHOD OF MANUFACTURING SOI WAFER HAVING NON-SOI REGION, SEMICONDUCTOR DEVICE USING THE SOI WAFER HAVING NON-SOI REGION AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between the first and second semiconductor regions, and an isolation insulating layer buried in the trench.