发明名称 METHOD FOR MEASURING POINT DEFECT DISTRIBUTION OF SILICON SINGLE CRYSTAL INGOT
摘要 First, a single crystal ingot is sliced in the axial direction so as to contain the central axis of the ingot, thereby obtaining a measuring sample containing region [V], region [Pv], region [Pi] and region [I]. This sample is halved so as to realize symmetry across the central axis, thereby obtaining the first sample and the second sample. Metal staining with a first transition metal is performed on the surface of the first sample, and metal staining with a second transition metal which is different from the first transition metal is performed on the surface of the second sample. The metal stained first and second samples are subjected to heat treatment so as to diffuse the first and second transition metals into the sample interiors. The respective recombination life times over the entireties of first and second samples are measured, and the vertical measurement of the first sample is superimposed on the vertical measurement of the second sample. On the basis of superimposition results, the boundary between region [Pi] and region [I] and the boundary between region [V] and region [Pv] are individually defined.
申请公布号 KR20050067417(A) 申请公布日期 2005.07.01
申请号 KR20057006712 申请日期 2005.04.18
申请人 SUMITOMO MITSUBISHI SILICON CORPORATION 发明人 KURITA KAZUNARI;FURUKAWA JUN
分类号 C30B15/00;C30B29/06;C30B33/00;(IPC1-7):C30B29/06 主分类号 C30B15/00
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