| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an element isolation film of a semiconductor device, which improves roughness of a trench side wall by implementing a predetermined cleaning process after element isolating trench etching, and forms a uniform side wall oxide film by skipping a PET process. SOLUTION: The invention comprises steps of: forming a tunnel oxide film, a conductive film, and a hard mask film sequentially on a semiconductor substrate; forming a photosensitive film pattern for opening an element isolation region on the hard mask film; forming a trench by implementing an etching process which uses the photosensitive film pattern as an etching mask and etching the hard mask film, the conductive film, the tunnel oxide film, and the semiconductor substrate; implementing a first cleaning process for removing a by-product produced at the time of etching process for the trench formation after removing the photosensitive film pattern; forming a side wall oxide film in the trench by implementing a side wall oxidation process; and forming an element isolation film by implementing a planarization process which uses the hard mask film as a shutdown film and removing the hard mask film after making a field oxide film deposited on the whole structure. COPYRIGHT: (C)2005,JPO&NCIPI
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