发明名称 Method of etching and etching apparatus
摘要 A thin film formed on a substrate is etched, without generating a plasma, with an etching gas containing a beta-diketone and a gas containing water and/or alcohol, thereby exposing a surface of the substrate.
申请公布号 US2005142885(A1) 申请公布日期 2005.06.30
申请号 US20050066268 申请日期 2005.02.28
申请人 TOKYO ELECTRON LIMITED 发明人 SHINRIKI HIROSHI
分类号 H01L21/00;H01L21/311;(IPC1-7):B08B3/00;H01L21/476;H01L21/302;H01L21/461 主分类号 H01L21/00
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