Non-volatile flash memory device

摘要

A non-volatile memory device having sidewall floating gates implementing two bits with just one transistor is disclosed. A disclosed method comprises a non-volatile memory device having a unit cell comprising: a transistor including a polysilicon gate, sidewall floating gates, block oxide layers and source and drain regions; a word line vertically placed on a substrate and connected to the polysilicon gate; and a pair of bit lines orthogonally placed to the word line and connected to the source and drain regions.