| 发明名称 |
Improvements in semiconductor devices and method of fabricating the same |
| 摘要 |
An alloy used in making tunnel diodes (see Group XXXVI) consists of indium containing 2% atomic of gallium.
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| 申请公布号 |
GB914832(A) |
申请公布日期 |
1963.01.09 |
| 申请号 |
GB19600042471 |
申请日期 |
1960.12.09 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
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| 分类号 |
A22C21/02;H01L21/00;H01L21/3063;H01L21/308;H01L29/00 |
主分类号 |
A22C21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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