发明名称 SEMICONDUCTOR LASER DEVICE AND METHOD OF PRODUCING THE SAME
摘要 <p>A semiconductor laser device (1) has a heat sink (20) and a semiconductor laser element (80). The heat sink (20) has a cooler body (21) formed by joining metallic members, a fluid flow path (30) formed inside the cooler body (21), a cooling region (23) on an outer wall surface (22), and a resin layer (40) continuously coated, except the cooling region (23), on the outer wall surface (22) and on an inner wall surface (33). The semiconductor laser element (80) is provided in the cooling region (23) while being kept in thermal contact with the outer wall surface (22). Continuously coating the resin layer (40) on the outer wall surface (22) and on the inner wall surface (33), but excluding on the cooling region (23), prevents corrosion of a portion near the section where the outer wall surface and the inner wall surface are in contact with each other.</p>
申请公布号 WO2005060057(A1) 申请公布日期 2005.06.30
申请号 WO2004JP18842 申请日期 2004.12.16
申请人 HAMAMATSU PHOTONICS K.K.;KAN, HIROFUMI;MIYAJIMA, HIROFUMI;WATANABE, NOBUO 发明人 KAN, HIROFUMI;MIYAJIMA, HIROFUMI;WATANABE, NOBUO
分类号 H01L23/473;H01S5/022;H01S5/024;H01S5/40;(IPC1-7):H01S5/024 主分类号 H01L23/473
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