Power metal oxide semiconductor field effect transistor for linear automatic controller, has conducting channel formed at gate electrode based on electron affinity difference in channel zone to avoid threshold voltage drop of electrode

摘要

The transistor has a drift zone (22) and a source zone (40), and a channel zone (30) arranged between the drift and source zones such that a gate electrode (50) having a temperature range is isolated from the channel zone. A conducting channel is formed at the gate electrode based on an electron affinity difference in the channel zone, to avoid drop of threshold voltage of the electrode during rise in temperature.