发明名称 SOLID STATE IMAGING APPARATUS AND ITS FABRICATING PROCESS
摘要 <p><P>PROBLEM TO BE SOLVED: To condense light impinging on the upper peripheral part of a photodiode effectively at a photodiode over a wide range. <P>SOLUTION: The solid state imaging apparatus comprises a photodiode group 1 arranged in one-dimensionally or two-dimensionally, inorganic dielectric films 8b and 8c formed on the photodiode of a translucent inorganic substance, and a hollow layer 9 formed in the inorganic dielectric film to be defined by inner and outer sidewalls wherein the hollow layer has funnel shape starting from the upper peripheral part of the photodiode with the opening increasing gradually as it recedes from the photodiode. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005175442(A) 申请公布日期 2005.06.30
申请号 JP20040308424 申请日期 2004.10.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KATO YOSHIAKI
分类号 H01L27/14;H01L27/146;H01L27/148;H01L31/10;H04N5/225;H04N5/335;H04N5/369;H04N5/372;H04N101/00;(IPC1-7):H01L27/14 主分类号 H01L27/14
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