| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method thereof which exhibits a good effect in its TAT contraction and has an advantageous structure in such a processing accuracy that the variations of its mass-production are considered therein. SOLUTION: The manufacturing method of the fundamental structure of the semiconductor device which is prepared as a master chip includes a step for forming an interlayer dielectric IL having the successive laminated layers on a fundamental element group SC which comprise a nitride film 21, an oxide film 22, a nitride film 23, and an oxide film 24; a step for planarizing the oxide film 22 present on the nitride film 21; a step for planarizing thereafter the nitride film 23 and the oxide film 24 wherein the thickness of the nitride film 23 is made larger than the nitride film 21; and a step for forming in the oxide film 22, the nitride film 23, and the oxide film 24 which are present above the nitride film 21 each through hole H1 correspondingly to each wiring connecting region 17. Thereafter, the nitride film 21 present in the bottom of each through hole H1 is so removed as to perform an electrical connection. In this case, the side portion of a first-layer metal wiring is surrounded selectively by the oxide film 24, and is connected with each wiring connecting region 17 while passing through the nitride film 21. COPYRIGHT: (C)2005,JPO&NCIPI |
