| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus of exposure which can perform an excellent focus correction to the flatness of the surface of a wafer without reducing a throughput. SOLUTION: The method of exposing a pattern formed in a reticle to a plurality of shots on a material to be treated includes a step of measuring the flatness of the plurality of the shots on the material to be treated, a step of specifying the shot in which the flatness is out of a predetermined range obtained by the measuring step of the plurality of the shots on the material to be treated to the specific shot, a step of acquiring in more detail than the position information of the shot except the specific shot of the step of acquiring the position information by measuring a plurality of positions of measuring points of the material to be treated, and a step of controlling at least one of the position and the inclination of the material to be treated by using the position information of the specific shot acquired by the acquiring step. COPYRIGHT: (C)2005,JPO&NCIPI
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