发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a off-leak current, sharpening a rising of voltage, when a power is tuned on after it is cut off, decreasing the through current flowing at that time, and of realizing speeding up and low power consumption. SOLUTION: The semiconductor device comprises a cell power line 102 for supplying a voltage to a logic circuit 101, a capacitive power line 103 for supplying a voltage to the cell power line 102, a control circuit power line 107, switches 104, 108 for disconnecting/connecting the cell power line 102, the capacitive power line 103, and the control circuit power line 107; and buffer circuits 106, 110 for driving signals 105, 109 for controlling the switches 104, 108. When a system is started, after applying electric potential to charge the capacitive power line 103, immediately prior to the starting-up of the system, turning on the switch 104 across the cell/capacitor to apply the voltage to the cell power line 102 enables sharp increase in the voltage of the cell power line 102 to reduce the charging time, which reduces the passing current flowing the transistors that forms the logic circuit 101. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005175269(A) 申请公布日期 2005.06.30
申请号 JP20030414839 申请日期 2003.12.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ISONO TAKANOBU
分类号 H01L21/822;H01L21/82;H01L27/04;H03K19/00;(IPC1-7):H01L21/822 主分类号 H01L21/822
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