| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a good hetero structure that a crystal defect or the roughness of an interface is improved and having stable characteristics, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device 100 includes a semiconductor layer, a gate insulating layer 26 formed on the semiconductor layer, and a gate electrode 28 formed on the gate insulating layer 26. The semiconductor layer has a hetero structure that a first layer (SiGe layer 14) containing at least Si and Ge, and a second layer (Si layers 13, 16) having a composition different from the first layer and containing at least an Si are laminated in such a manner that a carbon exists in the interface region between the first layer and the second layer. COPYRIGHT: (C)2005,JPO&NCIPI
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