| 摘要 |
PROBLEM TO BE SOLVED: To form a trench with a deep groove where a state of a wall face is sufficient while width of the groove is suppressed to become larger. SOLUTION: In a semiconductor device where the groove is formed on a main face of a semiconductor substrate, the groove is constituted of a surface layer part which continues from the main face of the semiconductor substrate, an intermediate part which continues from the surface layer part and a deep layer part which continues from the intermediate part. Side walls of the surface layer part, the intermediate part and the deep layer part are formed in forward taper shapes whose upper parts are wider than lower parts. A manufacturing method has a process for forming a first mask where a center part of a region in which a prescribed groove is formed is opened, a process for forming an intermediate groove on the main face of the semiconductor substrate by anisotropic etching using the first mask, a process for forming a second mask where the region in which the prescribed groove is formed is opened and a process for etching the main face of the semiconductor substrate and the first groove by anisotropic etching using the second mask and forming the prescribed groove. COPYRIGHT: (C)2005,JPO&NCIPI
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