ION IMPLANTATION METHOD AND ION IMPLANTATION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an ion implantation method and an ion implantation device capable of preventing increase of the height of the device and the occupation area of the device, in an ion implantation device for executing ion implantation to a large substrate of 1 m to 2 m square. SOLUTION: This ion implantation device 10 is provided with: an ion source 11 for generating an ion beam B1; beam deflection mechanisms 12 and 13 for changing the ion beam 11 into a ribbon-like ion beam B3; and a substrate scan mechanism 14 for moving a substrate 20 in a direction intersecting with the radiation direction of the ribbon-like ion beam B3. The ion beam B1 generated by the ion source 11 is changed into the ribbon-like ion beam B3 expanding nearly in the vertical direction by the beam deflection mechanisms 12 and 13, and the substrate 20 is moved nearly in the horizontal direction by the substrate scan mechanism 15. COPYRIGHT: (C)2005,JPO&NCIPI