发明名称 SOLID-STATE DETECTOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent deterioration in a photoconductive layer by reducing the application of heat, when connecting an external terminal to a second electrode. SOLUTION: The solid-state detector 1 comprises the external terminal 10, which is electrically connected to a voltage source 61 which applies a recording voltage HV to the second electrode 6, when recording image information on an electric storage section 7 and a connecting member 9 of which one end 9a is fixed to the external electrode 10, and of which the other end 9b comprises an electrically conductive elastomer which is in contact with the second electrode 6 by an elastic force. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005172558(A) 申请公布日期 2005.06.30
申请号 JP20030411623 申请日期 2003.12.10
申请人 FUJI PHOTO FILM CO LTD 发明人 IWAKIRI NAOTO
分类号 G21K4/00;G01T1/00;G01T1/24;H01L25/00;H01L27/00;H01L27/14;H01L31/08;H01L31/09;(IPC1-7):G01T1/24 主分类号 G21K4/00
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