| 摘要 |
A method of fabricating a nonvolatile memory device including forming a plurality of device isolation layers in a semiconductor substrate to define a plurality of active regions, sequentially depositing an insulating layer and a first conductive layer on the semiconductor substrate, and forming a hard mask pattern on the first conductive layer. The method also includes forming a plurality of floating gates on the insulating layer by etching the first conductive layer using the hard mask pattern as a mask, forming a tunnel insulating layer on the semiconductor substrate including floating gates and the insulating layer, and depositing a second conductive layer on the tunnel insulating layer. The method further includes forming a plurality of control gate electrodes across the active regions by etching the second conductive layer, forming source and drain regions in the semiconductor substrate by performing an ion implantation, and forming contacts in the drain regions.
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