发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device which, on performing a via first Dual Damascene process, inhibits or prevents the formation of a void in a bottom anti-reflective coating filling a via hole. The method typically includes the steps of forming a bottom anti-reflective coating (BARC) in a via hole in an interlayer dielectric on a semiconductor substrate sufficiently to fill the via hole; disposing an acid diffusion material on the BARC; forming a cross-link layer between the BARC and the acid diffusion material; removing the remaining acid diffusion material; and etching the cross-link layer, the BARC and the interlayer dielectric to form a trench extending from an upper portion of the via hole.
|
申请公布号 |
US2005142855(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040969550 |
申请日期 |
2004.10.20 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
CHOI YONG J. |
分类号 |
G03F7/16;H01L21/4763;H01L21/768;H01L23/48;H01L23/52;H01L29/40;(IPC1-7):H01L21/476 |
主分类号 |
G03F7/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|