发明名称 |
Dynamic schottky barrier MOSFET device and method of manufacture |
摘要 |
A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.
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申请公布号 |
US2005139860(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040970688 |
申请日期 |
2004.10.21 |
申请人 |
SNYDER JOHN P.;LARSON JOHN M. |
发明人 |
SNYDER JOHN P.;LARSON JOHN M. |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/78;(IPC1-7):H01L29/74;H01L21/425 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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