发明名称 |
NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same |
摘要 |
Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
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申请公布号 |
US2005139921(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040019179 |
申请日期 |
2004.12.23 |
申请人 |
KANG JIN Y.;LEE SEUNG Y.;CHO KYOUNG I. |
发明人 |
KANG JIN Y.;LEE SEUNG Y.;CHO KYOUNG I. |
分类号 |
H01L27/092;H01L21/331;H01L21/8228;H01L21/84;H01L27/12;(IPC1-7):H01L27/01 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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