| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which is characterized in that semiconductor thin film consists of large size crystal grains excellent in crystallinity, location of grain boundary of channel forming region is controlled, electrical property is excellent; and that variation of the electrical property is little, the semiconductor device and an indicating device, and substrates used for the semiconductor device and the indicating device. SOLUTION: The method comprises the processes of forming an optical transparency material layer 303 at a predetermined region on an optical transparency substrate 301; forming a non-single crystal semiconductor layer 305 on either side of a substrate formed by the above-mentioned process; forming a single crystal semiconductor layer 407 by melting and crystallizing an exposure area of the above-mentioned non-single crystal semiconductor layer, in such a way that a laser beam 50 is irradiated from both non-forming sides of the non-single crystal semiconductor layer of the above-mentioned substrate; and forming a semiconductor circuit 409 using the above-mentioned single crystal semiconductor layer. Further, in the above-mentioned semiconductor circuit forming process, a pattern used for alignment is employed which is formed by the above-mentioned optical transparency material layer in order to align an exposure device optical system and the substrate. COPYRIGHT: (C)2005,JPO&NCIPI |
