| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element including metal-insulator-metal capacitor, and to provide a manufacturing method of the same. SOLUTION: A manufacturing method of a semiconductor element, wherein after a first metal layer and a dielectric film are sequentially formed on an insulating film 120, the dielectric is left only on the part where the dielectric film is patterned and a metal-insulator-metal capacitor 160 is formed, and a second metal layer is formed on the dielectric film and the first metal layer. The second metal layer, the dielectric film and the first metal layer are patterned at once; on one side are formed with wiring 152 and 155 having a first and second metal layers 135a, 135a', 145a, 145a' laminated thereon; and on the other side are formed with a lower electrode 135b composed of the first metal layer, a dielectric film 140b, and the metal-insulator-metal capacitor 160, including an upper electrode 145b composed of the second metal layer. COPYRIGHT: (C)2005,JPO&NCIPI |
