| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated and released beam layer structure manufactured in a trench and its manufacturing method. SOLUTION: The beam layer structure has a semiconductor substrate 20, the trench 18, a first electrical conducting layer 24, and the beam 28. The trench is extended inside the semiconductor substrate and has a wall. The first electrical conducting layer is positioned on the wall of the trench in the selected position. The beam is positioned on the trench, and the first part of it is connected to the semiconductor substrate, and a second part of it is movable. The second part of the beam is separated from the wall of the trench by the selected distance. Therefore, the second part of the beam is freely movable inside the plane vertical or parallel to the surface of the substrate, and can be deflected, that is, deformed relative to the trench so as to electrically contact in response to a predetermined acceleration force applied to the beam structure or the change of a predetermined temperature. COPYRIGHT: (C)2005,JPO&NCIPI
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