发明名称 |
Semiconductor device having MOS varactor and methods for fabricating the same |
摘要 |
In a method for manufacturing a semiconductor device, a gate electrode is formed in a first region. A silicide blocking layer is patterned such that a first gate spacer is formed on sidewalls of the gate electrode, and a silicide blocking layer pattern is formed in a second region. A lightly doped source/drain region is formed on surface of the first region. A second gate spacer is formed on sidewalls of the first gate spacer. A heavily doped source/drain region is formed on the surface of the first region. A silicide layer is formed on the gate electrode and the heavily doped source/drain region in the first region.
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申请公布号 |
US2005142779(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040023623 |
申请日期 |
2004.12.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
CHEONG KONG-SOO;YOUN KI-SEOG;KIM KYUNG-SOO |
分类号 |
H01L21/336;H01L27/06;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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