发明名称 |
Semiconductor devices and methods of manufacturing the same |
摘要 |
Semiconductor devices and methods of manufacturing the same are provided. A disclosed semiconductor device includes: a semiconductor substrate; a gate insulating layer on the active region of the semiconductor substrate; a gate on the gate insulating layer; LDD regions on opposite sides of the gate insulating layer and located in the semiconductor substrate; source/drain regions on the LDD regions; and silicide layers on the surfaces of the gate and the source/drain regions. The source/drain regions are formed by doping impurities in a silicon layer grown by a selective epitaxy.
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申请公布号 |
US2005139912(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040027044 |
申请日期 |
2004.12.30 |
申请人 |
KOH KWAN-JU |
发明人 |
KOH KWAN-JU |
分类号 |
H01L21/336;H01L29/423;H01L29/78;H01L29/94;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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