发明名称 |
Field-effect transistor |
摘要 |
A field-effect transistor includes: a carrier supply layer supplying carriers; a Schottky contact layer forming a Schottky barrier; and an intermediate layer formed between the carrier supply layer and the Schottky contact layer. Here, the intermediate layer has an electron affinity which is higher than an electron affinity of the carrier supply layer but lower than an electron affinity of the Schottky contact layer.
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申请公布号 |
US2005139870(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040014893 |
申请日期 |
2004.12.20 |
申请人 |
HIKITA MASAHIRO;YANAGIHARA MANABU |
发明人 |
HIKITA MASAHIRO;YANAGIHARA MANABU |
分类号 |
H01L29/812;H01L21/335;H01L21/338;H01L29/778;(IPC1-7):H01L31/033;H01L21/336 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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