METHOD OF ELECTROCHEMICAL CHEMICAL MECHANICAL PLANARIZATION PROCESS

摘要

The present invention relates to procedures and compositions for CMP materials used to planarize metals, such as Cu and Al, used in fabricating semiconductor devices. Optimization of the CMP process can be achieved by decreasing the role of mechanical abrasion in the CMP and increasing the role of chemical polishing, which can also improve material removal rates. Increasing the role of chemical polishing can be accomplished by creating a polishing slurry, or pad which contains components that interact chemically or electrochemically with the surface to be polished. This slurry or a pad may contain reactive abrasive particles, which replace the hard inert abrasive particles of conventional slurries. Use of reactive abrasive particles can reduce the role of mechanical abrasion in the CMP process. Use of this slurry or a pad in CMP can reduce surface scratches and device damage.