发明名称 |
STORAGE CAPACITOR HAVING A SCATTERING EFFECT AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A storage capacitor having a scattering effect is positioned in a substrate for use in a thin film transistor array loop. The storage capacitor is characterized by having a rough layer overlapped by a medium layer and a passivation layer. The storage capacitor further has a reflective layer with high reflectivity so as to provide the storage capacitor with the scattering effect toward an external light source. A method of manufacturing the storage capacitor by two photolithography processes is also shown. |
申请公布号 |
KR20050066982(A) |
申请公布日期 |
2005.06.30 |
申请号 |
KR20040084029 |
申请日期 |
2004.10.20 |
申请人 |
M-DISPLAY OPTRONICS CORP. |
发明人 |
HSU HUNG HUEI |
分类号 |
G02F1/1368;G02F1/136;G02F1/1362;H01G4/008;H01L21/77;H01L21/8242;H01L27/12;H01L27/13;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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