发明名称 STORAGE CAPACITOR HAVING A SCATTERING EFFECT AND METHOD OF MANUFACTURING THE SAME
摘要 A storage capacitor having a scattering effect is positioned in a substrate for use in a thin film transistor array loop. The storage capacitor is characterized by having a rough layer overlapped by a medium layer and a passivation layer. The storage capacitor further has a reflective layer with high reflectivity so as to provide the storage capacitor with the scattering effect toward an external light source. A method of manufacturing the storage capacitor by two photolithography processes is also shown.
申请公布号 KR20050066982(A) 申请公布日期 2005.06.30
申请号 KR20040084029 申请日期 2004.10.20
申请人 M-DISPLAY OPTRONICS CORP. 发明人 HSU HUNG HUEI
分类号 G02F1/1368;G02F1/136;G02F1/1362;H01G4/008;H01L21/77;H01L21/8242;H01L27/12;H01L27/13;(IPC1-7):G02F1/136 主分类号 G02F1/1368
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