| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent reliability for a long period of time by effectively preventing the deterioration of performance of element characteristics due to entrance of moisture. <P>SOLUTION: A first moisture resistant ring 13 is provided between a circuit forming unit 11 having a transistor 22, a dielectric capacitor 24 and a wiring 15 which are formed on a semiconductor substrate 21, and an electrode pad unit 12 formed outside the circuit forming unit 11, so as to surround the circuit forming unit 11. The first moisture resistant ring 13 is constituted of a ring pad 31 which arrives from the surface of the semiconductor substrate 21 to a passivation film 28, a ring contact 32, and the structure of a ring plug 33. The first moisture resistant ring 13 intercepts moisture or the like which enters from the vicinity of the electrode pad unit 12. Further, a second moisture resistant ring 14 for intercepting the entrance of moisture from a side wall surface 26 can be provided outside the electrode pad unit 12, so as to surround the circuit forming unit 11 and the electrode pad unit 12. It indicates also about a barrier layer or the passivation film. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
