发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging device with an in-layer lens in which a crack and a peeling are not generated and a desired refractive index is designed in response to the requirement performance of a device, and which has an excellent uniformity and has a high quality and a high performance. SOLUTION: A first transparent film 10 is formed on a semiconductor substrate 1 to which a photoelectric converter 2 is formed. A second transparent film having the refractive index higher than the film 10 is deposited on the film 10 by a sputtering method. A protrusion is formed to at least one of the upper-lower surfaces of the second transparent film in the upper section of the converter 2, thus constituting the in-layer lens 11. In the second transparent film, a thin-film having the desired refractive index can be selected from a metallic compound and a silicon compound. In the second transparent film, the refractive index can be changed freely by simultaneously sputtering two kinds or more of compounds and forming a thin-film multilayer structure by alternately laminating two kinds or more of the compounds. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005174967(A) 申请公布日期 2005.06.30
申请号 JP20030408340 申请日期 2003.12.05
申请人 SHARP CORP 发明人 NAKAI JUNICHI;AOKI TETSUO
分类号 H01L27/14;G02B3/00;H01L21/00;H01L27/146;H01L31/0232;H01L31/10;H04N5/335;(IPC1-7):H01L27/14 主分类号 H01L27/14
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