| 摘要 |
PROBLEM TO BE SOLVED: To reduce an aspect ratio of a contact connecting a bit line and a transistor. SOLUTION: In a ferroelectric storage device, a substrate 11 is provided with: a first groove which extends in a first direction and has first depth; a second groove 14 having second depth shallower than first depth; an element separation insulating film 13 embedded in the first groove, a gate electrode 16a formed in the lower region of the second groove; a first insulating film 17 formed in the upper region of the second groove; a first diffusion layer formed in the substrate on one side in the second groove; a second diffusion layer formed in the substrate on the other side in the second groove, a ferroelectric capacitor 29a arranged on the first diffusion layer; a first contact 31b disposed on the ferroelectric capacitor; a first wiring layer 32b installed on the first contact, a second contact 31a arranged on the second diffusion layer; and a second wiring layer 32a disposed on the second contact. COPYRIGHT: (C)2005,JPO&NCIPI
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